smd type ic www.kexin.com.cn 1 smd type ic mos field effect transistor KPA1793 features low on-state resistance n-channel r ds(on)1 =69m max. (v gs =10v,i d =1.5a) r ds(on)2 =72m max. (v gs =4.0v,i d =1.5a) r ds(on)3 = 107 m max. (v gs =2.5v,i d =1.0a) p-channel r ds(on)1 = 115 m max. (v gs =-4.5v,i d =-1.5a) r ds(on)2 = 120 m max. (v gs =-4.0v,i d =-1.5a) r ds(on)3 = 190 m max. (v gs =-2.5v,i d =-1.0a) low input capacitance n-channel c iss = 160 pf typ. p-channel c iss = 370 pf typ. built-in gate protection diode small and surface mount package absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage (v gs =0v) v dss 20 -20 v gate to source voltage (v ds =0v) v gss 12 12 v drain current (dc) i d(dc) 3 3 a drain current (pulse) *1 i d(pulse) 12 12 a total power dissipation (1 unit) *2 p t w total power dissipation (2 units) *2 p t w channel temperature t ch storage temperature t stg *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 5500 mm 2 x2.2mm 1.7 2 150 -55to+150
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol min typ max unit v ds =20v,v gs =0v n-ch 10 v ds = -20v, v gs =0v p-ch -10 v gs = 12 v, v ds =0v n-ch 10 v gs = 12 v, v ds =0v p- ch 10 v ds =10v,i d = 1 ma n-ch 0.5 1.0 1.5 v ds =-10v,i d = -1 ma p- ch -0.5 -1.0 -1.5 v ds =10v,i d = 1.5 a n-ch 1.0 v ds =-10v,i d = -1.5 a p- ch 1.0 r ds(on)1 v gs =4.5v,i d =1.5a 55 69 m r ds(on)2 v gs =4.0v,i d =1.5a 57 72 m r ds(on)3 v gs =2.5v,i d = 1.0a 78 107 m r ds(on)1 v gs =-4.5v,i d = -1.5 a 75 115 m r ds(on)2 v gs =-4.0v,i d = -1.5 a 80 120 m r ds(on)3 v gs =-2.5v,i d = -1.0 a 116 190 m n-channel n-ch 160 v ds =10v,v gs = 0 v,f = 1 mhz p- ch 370 n-ch 60 p- channel p- ch 110 v ds =-10v,v gs = 0 v,f = 1 mhz n-ch 40 p- ch 40 n-channel n-ch 17 v dd =15v,i d =1.5a,v gs =4v p- ch 120 r g =10 n-ch 50 p- ch 260 p- channel n-ch 86 v dd =-15v,i d =-1.5a,v gs =-4v p- ch 410 r g =10 n-ch 80 p- ch 360 n-channel n-ch 3.1 i d =3.0a,v dd =16v,v gs = 4.0 v p- ch 3.4 n-ch 0.7 p- channel p- ch 1.3 i d =-3.0a,v dd =-10v,v gs = -4.0 v n-ch 1.4 p- ch 1.6 i f =3a,v gs =0v n-ch 0.86 i f =3a,v gs =0v p-ch 0.86 n-ch 70 p- ch 24 n-ch 12 p- ch 1.5 |y fs | forward transfer admittance drain to source on-state resistance i dss zero gate voltage drain current c iss c oss input capacitance output capacitance i gss gate leakage current v gs(off) gate cut-off voltage c rss t d(on) t r t d(off) reverse transfer capacitance turn-on delay time rise time turn-off delay time t f q g fall time total gate charge q gs gate to source charge q gd gate to drain charge v f(s-d) body diode forward voltage note t rr reverse recovery time q rr reverse recovery charge i f =3a,v gs =0v,d i /d t =50a/ s nc ns a a v s nc ns ns ns ns v nc nc pf pf testconditons pf n-ch p- ch KPA1793
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